Aihui and Yao’s work entitled “Ligand-Driven Grain Engineering of High Mobility Two-Dimensional Perovskite Thin-Film Transistors” has been published in JACS. We demonstrate field-effect transistors of a novel 2D OSiP with hole mobility approaching 10 cm2 V–1 s–1 with ON/OFF current ratios of ∼106 and excellent stability and reproducibility. Great collaboration with Prof. M. Ashraf Alam group and many others. Congratulations! Read the story here.